Qingdao Builds First Domestic AI & VR Public Service Platform

The first domestic public service platform based on Microsoft’s artificial intelligence (AI) and virtual reality (VR) technology has launched in Laoshan, Qingdao.

Jointly developed by Microsoft, the Laoshan District Government and Qingdao Huashiyun Education Technology Corp., the platform’s focus is to create a national center for the AI and VR industries.

In 2018, Microsoft (China) signed a strategic collaboration agreement with Laoshan District Government and Qingdao Huashiyun Education Technology Corp. targeting deep cooperation in multiple technology areas. These include AI, VR, cloud computing, big data, and talent cultivation, to name a few.

As of now, the AI and VR public service platform and online education platform have been put into place. Microsoft’s new technology demonstration center based on Microsoft’s AI and VR technology is open to the public. Microsoft plans to create three smart solutions in Qingdao, totaling 10 in the next three years.

(Source: https://laoyaoba.com/newinfo?id=709694)

HLMC: 28nm HKC+ Ramps into Production Q4 2019, 14nm FinFET Production Begins in 2020

At SEMICON China 2019, Shanghai Huali Microelectronics Corp. (HLMC) announced during the Advanced Manufacturing Forum that its 28nm HKC+ process will ramp into production by the end of this year, while its 14nm FinFET process will be in volume production by the end of 2020.

In today’s digital age, new technology developments, products and services are flourishing. This includes such emerging markets as autonomous vehicles, AR/VR, deep neural networks and digital medical care. As was seen at MWC 2019, 5G has been realized, and the world will soon enter the Internet of Everything (IoE) era. These technologies can’t be developed without the semiconductor industry.

Currently, HLMC has two fabs. Huahong 5 Fab’s monthly capacity is about 35,000 300mm wafers at process nodes ranging from 58nm to 28nm. By 2021, Huahong 6 fab aims to reach monthly capacity of 40,000 FinFET wafers, manufactured at nodes from 28nm down to 14nm.

(Source: https://laoyaoba.com/newinfo?id=709684)