Jiaxin Builds GaN/GaAs Power Semiconductor Base
Zhejiang Bofang Jiaxin, a smart manufacturing project focused on next-generation power semiconductors, has officially launched. According to Jiaxing Daily, investors in the Bofang Jiaxin project include Xi’an Bonray Integrated Information Electronics, Co.,LTD, Huaxun Technology and Shenzhen FDX Fund. The large-scale project will produce gallium nitride (GaN) and gallium arsenide (GaAs) RF chips and power components.
Total project investment is expected to reach 2.5 billion yuan. The completed facility will serve as a leading 6-inch compatible/4-inch compound semiconductor wafer production line with annual capacity of 200,000 wafers total. Construction will be completed by the end of 2019, with mass production commencing in Q1 2020.
Qingdao Core Valley-Qualcomm China-Goertek Joint Innovation Center Opened
The Qingdao Core Valley-Qualcomm China-Goertek Joint Innovation Center has officially opened for business. Formed through a joint agreement signed by Qingdao Microelectronics Innovation Center Corp., Qualcomm China and Goertek in December 2017, the facility is located in Laoshan District, Qingdao City.
The Joint Innovation Center aims to integrate Qualcomm’s technical advantage with Goretek’s platform resources, providing technology evaluation, research guidance, test and certification for smart hardware and Internet of Things (IoT) markets, such as smart audio, virtual and augmented reality (VR/AR), wearable devices and more.
Consisting of a demonstration center and an innovation lab, the center will also host training sessions and seminars related to venture capital, entrepreneurial guidance, communications, and IoT and VR/AR technologies.